Part Number Hot Search : 
055005J 20N6T 1N5347B R5F61525 56F83 BAS16T 12506 100PF
Product Description
Full Text Search
 

To Download F5E3 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
DESCRIPTION
The F5E series are 880nm LEDs in a wide angle, TO-46 package.
0.030 (0.76) NOM
0.155 (3.94) MAX
FEATURES
* Good optical to mechanical alignment * Mechanically and wavelength matched
1.00 (25.4) MIN
SCHEMATIC
ANODE (Connected To Case) CATHODE 3
ANODE (CASE)
to the TO-18 series phototransistor * Hermetically sealed package
0.100 (2.54) 0.050 (1.27)
* High irradiance level
1
0.040 (1.02) 0.040 (1.02) 45
1
3 O0.020 (0.51) 2X
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/C above 25C ambient. 2. Derate power dissipation linearly 13.0 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10s; 100Hz) Forward Current (pw, 1s; 200Hz) Reverse Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2)
(TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF IF VR PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 3 10 3 170 1.3 Unit C C C C mA A A V mW W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25C) (All measurements made under pulse conditions)
MIN TYP MAX UNITS
SYMBOL
Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5E1 (7) Total Power F5E2 (7) Total Power F5E3 (7) Rise Time 0-90% of output Fall Time 100-10% of output
IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA
"PE # VF IR PO PO PO tr tf
-- -- -- -- 12.0 9.0 10.5 -- --
880 40 -- -- -- -- -- 1.5 1.5
-- -- 1.7 10 -- -- -- -- --
nm Deg. V A mW mW mW s s
2001 Fairchild Semiconductor Corporation DS300287 4/25/01
1 OF 3
www.fairchildsemi.com
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
Figure 1. Power Output vs. Input Current
10
PO, NORMALIZED POWER CURRENT
1.0
0.1 NORMALIZED TO I F = 100 mA TA = 25C PULSED INPUTS P W = 80 sec RR = 30 Hz 0.001 1 10 IF, INPUT CURRENT (mA) 100 1000
0.01
Figure 2. Power Output vs. Temperature
20 IF = 1 A PO, NORMALIZED POWER OUTPUT 10 8 6 4 2 I F = 100 mA 1 0.8 0.6 0.4 0.2 0.1 -25 NORMALIZED TO I F = 100 mA, TA = 25C PW = 80 sec, f = 30 Hz 3 4
Figure 3. Forward Voltage vs. Temperature
PW = 80 sec f = 30 Hz IF = 1 A
VF, FORWARD VOLTAGE (V)
0.5 A 2
100 mA 10 mA
0
25
50
75
100
125
150
1 -25
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 4. Typical Radiation Pattern
100 120 100 RELATIVE OUTPUT (%) F5E 60 80 60 40 20
Figure 5. Output vs. Wavelength
PO, RELATIVE CURRENT (%)
80
TYPICAL SPECTRAL RESPONSE OF SLICON PHOTOSENSORS F5E
40
20
I F = 100 mA TA = 25C
0
-80
-60
-40
-20
0
20
40
60
80
100
700
800
900
1000
- DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
- WAVE LENGTH (nm)
www.fairchildsemi.com
2 OF 3
4/25/01
DS300287
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
DS300287
4/25/01
3 OF 3
www.fairchildsemi.com


▲Up To Search▲   

 
Price & Availability of F5E3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X